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SIHP23N60E-GE3
278-SIHP23N60E-GE3
PDF Datasheet
MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS
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Tech Specifications
Package/Case
TO-220-3
Continuous Drain Current (ID)
23A
Drain to Source Resistance
158mR
Drain to Source Voltage (Vdss)
600V
Fall Time
34ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.418nF
Max Operating Temperature
150°C
SIHP23N60E-GE3 Description
MOSFET 600V 158mOhm@10V 23A N-Ch E-SRS
FAQ
Are there related or alternative parts for SIHP23N60E-GE3?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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