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SIHP24N65EF-GE3
278-SIHP24N65EF-GE3
PDF Datasheet
Power Field-Effect Transistor, 24A I(D), 650V, 0.156ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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Tech Specifications
Package/Case
TO-220-3
Continuous Drain Current (ID)
24A
Drain to Source Resistance
156mR
Drain to Source Voltage (Vdss)
650V
Fall Time
46ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.656nF
Max Operating Temperature
150°C
SIHP24N65EF-GE3 Description
Power Field-Effect Transistor, 24A I(D), 650V, 0.156ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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