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Tech Specifications
Package/Case
TO-251-3
Continuous Drain Current (ID)
7A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
600mR
Drain to Source Voltage (Vdss)
650V
Fall Time
20ns
Gate to Source Voltage (Vgs)
4V
Input Capacitance
820pF
SIHU6N65E-GE3 Description
MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
FAQ
Is SIHU6N65E-GE3 currently in stock?
SIHU6N65E-GE3 is currently available on an inquiry basis. Please contact us for the latest stock information.
What operating temperature range does SIHU6N65E-GE3 support?
Are there related or alternative parts for SIHU6N65E-GE3?
What is the mounting type of SIHU6N65E-GE3?
What is SIHU6N65E-GE3?
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