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2N7002K-T1-GE3

The 2N7002K-T1-GE3 is a low-voltage N-channel MOSFET transistor manufactured by Vishay Siliconix. This transistor is designed for low-power applications and is available in a small SOT-23 package.

Description:

The 2N7002K-T1-GE3 is an N-channel enhancement mode field-effect transistor (MOSFET) with a threshold voltage (Vth) of -4.0V ± 1V. It has a drain-to-source breakdown voltage (Vdss) of -20V and a continuous drain current (Id) of 200mA.

Features:

• Low threshold voltage: -4.0V ± 1V
• Low gate charge: Qg (max) = 2.5nC
• Low input capacitance: Ciss = 250pF (typical)
• Small SOT-23 package

Applications:

The 2N7002K-T1-GE3 is suitable for a wide range of low-power applications, including:

1. Switching applications in low-voltage power supplies
2. Battery-powered devices
3. Portable electronics
4. Low-voltage motor drivers
5. LED drivers

In summary, the 2N7002K-T1-GE3 is a low-voltage N-channel MOSFET transistor that offers low threshold voltage, low gate charge, and low input capacitance. It is available in a small SOT-23 package and is suitable for a variety of low-power applications.