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SI1308EDL-T1-GE3

The SI1308EDL-T1-GE3 is a high voltage, high-speed N-channel MOSFET from Vishay Siliconix. It is designed for use in a variety of applications, including high voltage switching and high-speed switching.

Description:

The SI1308EDL-T1-GE3 is a surface-mount MOSFET with a drain-source voltage (Vds) of -80V and a continuous drain current (Id) of 3.6A. It has a low on-state resistance (Rds(on)) of 4.5mΩ max, which makes it suitable for high efficiency applications. The device also features a fast switching speed, with a typical gate charge (Qg) of 6.0nC and a gate-source threshold voltage (Vgs(th)) of -3.0V to -4.5V.

Features:

• High voltage, high-speed N-channel MOSFET
• Drain-source voltage (Vds) of -80V
• Continuous drain current (Id) of 3.6A
• Low on-state resistance (Rds(on)) of 4.5mΩ max
• Fast switching speed with a typical gate charge (Qg) of 6.0nC
• Gate-source threshold voltage (Vgs(th)) of -3.0V to -4.5V

Applications:

• High voltage switching
• High-speed switching
• Motor control
• Power management
• DC-DC converters
• Class D audio amplifiers
• Battery protection circuits
• High-voltage LED drivers
  Note: The SI1308EDL-T1-GE3 is a high voltage, high-speed MOSFET and it's important to follow proper design practices and take appropriate safety measures when using this device in a circuit. It's also important to check the datasheet for more detailed information about the device, such as electrical characteristics, thermal information, and packaging options.