Vishay / Siliconix_SI2319DS-T1-E3
original

Vishay / Siliconix
SI2319DS-T1-E3

278-SI2319DS-T1-E3
MOSFET P-CH 40V 2.3A SOT23-3
11 Weeks

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Tech Specifications

FET Type
P-Channel
Input Capacitance (Ciss) (Max) @ Vds
470 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Product Status
Active
Supplier Device Package
SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)
40 V
Power Dissipation (Max)
750mW (Ta)
Package / Case
TO-236-3, SC-59, SOT-23-3
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SI2319DS-T1-E3 Description

The Vishay / Siliconix SI2319DS-T1-E3 is a high-performance, high-voltage MOSFET designed for use in a variety of power electronic applications. Here is a description of the model, its features, and potential applications:

Description:

The SI2319DS-T1-E3 is a N-channel, high-voltage MOSFET that offers excellent electrical characteristics and performance. It is designed to operate in a wide range of temperatures and voltages, making it suitable for use in a variety of power electronic applications.

Features:

  1. High Voltage Rating: The SI2319DS-T1-E3 is designed to handle high voltages, making it suitable for use in applications that require high-voltage switching.
  2. Low On-Resistance: The device has a low on-resistance, which helps to minimize power losses and improve efficiency.
  3. High Switching Speed: The MOSFET is capable of high-speed switching, making it suitable for use in applications that require fast transient response.
  4. Robustness: The device is designed to be robust and reliable, with built-in protection features to guard against over-voltage, over-current, and over-temperature conditions.
  5. Low Gate Charge: The SI2319DS-T1-E3 has a low gate charge, which helps to reduce switching losses and improve overall efficiency.

Applications:

The SI2319DS-T1-E3 is suitable for use in a variety of power electronic applications, including:

  1. Motor Drives: The MOSFET can be used in motor drive applications, such as in electric vehicles or industrial motor control systems.
  2. Power Supplies: The device can be used in power supply applications, such as in switching power supplies or battery chargers.
  3. Inverters: The SI2319DS-T1-E3 can be used in inverter applications, such as in solar panel systems or uninterruptible power supplies (UPS).
  4. DC-DC Converters: The MOSFET is suitable for use in DC-DC converter applications, where high efficiency and fast transient response are required.
  5. Industrial Control Systems: The device can be used in industrial control systems, such as in robotics or automation equipment.

In summary, the Vishay / Siliconix SI2319DS-T1-E3 is a high-performance MOSFET that offers excellent electrical characteristics and performance. Its high voltage rating, low on-resistance, high switching speed, and robustness make it suitable for use in a variety of power electronic applications.

FAQ

What package or case is SI2319DS-T1-E3 available in?
SI2319DS-T1-E3 is available in the TO-236-3, SC-59, SOT-23-3 package / case.
What voltage specification is listed for SI2319DS-T1-E3?
What is SI2319DS-T1-E3?
Are there related or alternative parts for SI2319DS-T1-E3?
What is the standard lead time for SI2319DS-T1-E3?
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