Vishay / Siliconix
SI2337DS-T1-E3

278-SI2337DS-T1-E3
PDF Datasheet
MOSFET P-CH 80V 2.2A SOT23-3
14 Weeks

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Tech Specifications

FET Type
P-Channel
Input Capacitance (Ciss) (Max) @ Vds
500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 10 V
Product Status
Active
Supplier Device Package
SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)
80 V
Power Dissipation (Max)
760mW (Ta), 2.5W (Tc)
Package / Case
TO-236-3, SC-59, SOT-23-3
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SI2337DS-T1-E3 Description

The SI2337DS-T1-E3 is a high voltage, high-frequency, integrated gate driver from Vishay / Siliconix. It is designed to drive N-channel MOSFETs in power conversion applications such as DC-DC converters, motor drivers, and Class D audio amplifiers.

Description:

The SI2337DS-T1-E3 is a monolithic integrated circuit in a compact 8-pin SOIC package. It features a high voltage capability of up to 60V and can drive N-channel MOSFETs with a gate charge of up to 100nC. The device also includes built-in protection features such as overcurrent, overtemperature, and under-voltage lockout.

Features:

  • High voltage capability up to 60V
  • Drives N-channel MOSFETs with a gate charge of up to 100nC
  • Compact 8-pin SOIC package
  • Built-in protection features: overcurrent, overtemperature, and under-voltage lockout
  • Wide operating temperature range of -40°C to +125°C

Applications:

  • DC-DC converters
  • Motor drivers
  • Class D audio amplifiers
  • Power supplies
  • Renewable energy systems
  • Industrial control systems

The SI2337DS-T1-E3 is a versatile and reliable integrated gate driver that offers high performance and robust protection features in a compact package. It is suitable for a wide range of power conversion applications where high voltage and high-frequency operation are required.

FAQ

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