Vishay / Siliconix_SI3460BDV-T1-E3
original

Vishay / Siliconix
SI3460BDV-T1-E3

278-SI3460BDV-T1-E3
PDF Datasheet
MOSFET N-CH 20V 8A 6TSOP
11 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
860 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 8 V
Product Status
Active
Supplier Device Package
6-TSOP
Drain to Source Voltage (Vdss)
20 V
Power Dissipation (Max)
2W (Ta), 3.5W (Tc)
Package / Case
SOT-23-6 Thin, TSOT-23-6
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SI3460BDV-T1-E3 Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the SI3460BDV-T1-E3 belongs to can be classified under the Discrete Semiconductors. SI3460BDV-T1-E3 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. SI3460BDV-T1-E3 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Vishay / Siliconix plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Vishay / Siliconix is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Vishay / Siliconix builds trust with consumers and enhances the overall reputation of their products.

FAQ

Are there related or alternative parts for SI3460BDV-T1-E3?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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What operating temperature range does SI3460BDV-T1-E3 support?
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