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Vishay / Siliconix

SI8409DB-T1-E1

Name: SI8409DB-T1-E1
Brand: Vishay / Siliconix
SKU: 278-SI8409DB-T1-E1

Manufacturer:

Vishay / Siliconix

ERSA Part #:

278-SI8409DB-T1-E1

Datasheet:

PDF Datasheet

Description:

MOSFET P-CH 30V 4.6A 4MICROFOOT

Standard Lead Time:

14 Weeks

RoHS Status:

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Tech Specifications

FET Type

P-Channel

Gate Charge (Qg) (Max) @ Vgs

26 nC @ 4.5 V

Product Status

Active

Supplier Device Package

4-Microfoot

Drain to Source Voltage (Vdss)

30 V

Power Dissipation (Max)

1.47W (Ta)

Package / Case

4-XFBGA, CSPBGA

Technology

MOSFET (Metal Oxide)

SI8409DB-T1-E1 Description

The SI8409DB-T1-E1 is a high voltage, high current N-channel MOSFET from Vishay Siliconix. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and battery management systems.

Description:

The SI8409DB-T1-E1 is a N-channel MOSFET that features a high voltage rating of up to 100V and a continuous drain current of up to 40A. It is available in a TO-220 package, making it suitable for use in a wide range of applications.

Features:

High voltage rating of up to 100V
Continuous drain current of up to 40A
N-channel MOSFET
Available in a TO-220 package
Suitable for use in power electronic applications

Applications:

Motor control
Power supplies
Battery management systems
High voltage switching
Inverters
DC-DC converters

The SI8409DB-T1-E1 is a high performance MOSFET that offers excellent electrical characteristics and is suitable for use in a wide range of power electronic applications. Its high voltage and current ratings make it an ideal choice for applications that require high power and efficient switching.