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Vishay / Siliconix

SIA449DJ-T1-GE3

Name: SIA449DJ-T1-GE3
Brand: Vishay / Siliconix
SKU: 278-SIA449DJ-T1-GE3

Manufacturer:

Vishay / Siliconix

ERSA Part #:

278-SIA449DJ-T1-GE3

Datasheet:

PDF Datasheet

Description:

MOSFET P-CH 30V 12A PPAK SC70-6

Standard Lead Time:

27 Weeks

RoHS Status:

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Tech Specifications

FET Type

P-Channel

Input Capacitance (Ciss) (Max) @ Vds

2140 pF @ 15 V

Gate Charge (Qg) (Max) @ Vgs

72 nC @ 10 V

Product Status

Active

Supplier Device Package

PowerPAK® SC-70-6

Drain to Source Voltage (Vdss)

30 V

Power Dissipation (Max)

3.5W (Ta), 19W (Tc)

Package / Case

PowerPAK® SC-70-6

SIA449DJ-T1-GE3 Description

The SIA449DJ-T1-GE3 is a high voltage, high-power MOSFET transistor manufactured by Vishay Siliconix. It is designed for use in a variety of applications, including power electronics, motor control, and switching power supplies.

Description:

The SIA449DJ-T1-GE3 is a N-channel MOSFET transistor with a drain-source voltage (VDS) of -450V and a continuous drain current (ID) of 4.4A. It has a gate-source voltage (VGS) range of -1V to -10V and a threshold voltage (VTH) of -2V to -4V. The device is available in a TO-220AB package.

Features:

High voltage and high power capabilities
Low on-state resistance (RDS(on))
Fast switching speeds
High input impedance
Low gate charge
Avalanche rugged

Applications:

Power electronics
Motor control
Switching power supplies
Inverters
Battery protection circuits
High voltage switching applications

Overall, the SIA449DJ-T1-GE3 is a versatile and high-performance MOSFET transistor that is suitable for a wide range of applications that require high voltage and high power handling capabilities.