Vishay / Siliconix_SIR422DP-T1-GE3

Vishay / Siliconix
SIR422DP-T1-GE3  
Single FETs, MOSFETs

Vishay / Siliconix
SIR422DP-T1-GE3
278-SIR422DP-T1-GE3
Ersa
Vishay / Siliconix-SIR422DP-T1-GE3-datasheets-10366460.pdf
MOSFET N-CH 40V 40A PPAK SO-8
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SIR422DP-T1-GE3 Description

The SIR422DP-T1-GE3 is a high-performance, surface-mount Schottky barrier rectifier from Vishay / Siliconix. This device is designed to handle high power and high voltage applications, making it ideal for use in various industrial and automotive applications.

Description:

The SIR422DP-T1-GE3 is a high-power Schottky rectifier that features a maximum repetitive reverse voltage (VRRM) of 40V, a maximum average forward current (IF) of 42A, and a maximum peak forward surge current (IFSM) of 400A. The device has a low forward voltage drop and fast switching capabilities, making it suitable for high-efficiency power conversion applications.

Features:

  1. High power and high voltage handling capabilities
  2. Low forward voltage drop for improved efficiency
  3. Fast switching capabilities for reduced switching losses
  4. Surface-mount package for easy integration into compact designs
  5. High surge current capability for transient protection
  6. RoHS compliant for environmentally friendly applications

Applications:

The SIR422DP-T1-GE3 is suitable for a wide range of high-power applications, including:

  1. Power supplies for industrial equipment
  2. Automotive applications such as alternators and starters
  3. Motor control circuits for electric vehicles and industrial motor drives
  4. Renewable energy systems such as solar inverters and wind turbine converters
  5. Battery charging and energy storage systems
  6. High-voltage power conversion and regulation circuits

In summary, the SIR422DP-T1-GE3 is a high-power Schottky rectifier that offers excellent performance in terms of power handling, efficiency, and switching speed. Its surface-mount package and RoHS compliance make it suitable for a wide range of applications, including industrial, automotive, and renewable energy systems.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number

SIR422DP-T1-GE3 Documents

Download datasheets and manufacturer documentation for SIR422DP-T1-GE3

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Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service