Vishay / Siliconix
SQS660CENW-T1_GE3

278-SQS660CENW-T1_GE3
PDF Datasheet
AUTOMOTIVE N-CHANNEL 60 V (D-S)
57 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
1950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
26 nC @ 10 V
Product Status
Active
Supplier Device Package
PowerPAK® 1212-8W
Drain to Source Voltage (Vdss)
60 V
Power Dissipation (Max)
62.5W (Tc)
Package / Case
PowerPAK® 1212-8W
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SQS660CENW-T1_GE3 Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the SQS660CENW-T1_GE3 belongs to can be classified under the Discrete Semiconductors. SQS660CENW-T1_GE3 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. SQS660CENW-T1_GE3 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Vishay / Siliconix plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Vishay / Siliconix is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Vishay / Siliconix builds trust with consumers and enhances the overall reputation of their products.

FAQ

Are there related or alternative parts for SQS660CENW-T1_GE3?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What is SQS660CENW-T1_GE3?
What voltage specification is listed for SQS660CENW-T1_GE3?
What is the mounting type of SQS660CENW-T1_GE3?
What package or case is SQS660CENW-T1_GE3 available in?
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