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SIS888DN-T1-GE3
278-SIS888DN-T1-GE3
PDF Datasheet
Power Field-Effect Transistor
78 weeks
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Tech Specifications
Continuous Drain Current (ID)
20.2A
Drain to Source Resistance
48mR
Drain to Source Voltage (Vdss)
150V
Fall Time
8ns
FET Type
1 N-Channel
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Operating Temperature
150°C
SIS888DN-T1-GE3 Description
Power Field-Effect Transistor
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