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SQ2337ES-T1_GE3
278-SQ2337ES-T1_GE3
PDF Datasheet
Small Signal Field-Effect Transistor, 2.2A I(D), 80V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
15 weeks
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Tech Specifications
Package/Case
SOT-23
Continuous Drain Current (ID)
2.2A
Drain to Source Breakdown Voltage
-80V
Drain to Source Resistance
241mR
Drain to Source Voltage (Vdss)
-80V
Gate to Source Voltage (Vgs)
20V
Height
1.12mm
Max Operating Temperature
175°C
SQ2337ES-T1_GE3 Description
Small Signal Field-Effect Transistor, 2.2A I(D), 80V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
FAQ
What is the standard lead time for SQ2337ES-T1_GE3?
The standard lead time for SQ2337ES-T1_GE3 is 15 weeks.
What voltage specification is listed for SQ2337ES-T1_GE3?
What package or case is SQ2337ES-T1_GE3 available in?
Are there related or alternative parts for SQ2337ES-T1_GE3?
Does SQ2337ES-T1_GE3 have quantity-based pricing?
Availability
(In Stock :
18042 )
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $0.51600 | $5.16 |
| 30+ | $0.46628 | $13.99 |
| 100+ | $0.40628 | $40.63 |
| 500+ | $0.37885 | $189.43 |
| 1000+ | $0.36343 | $363.43 |
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