German
Japanese
Portuguese
Korea
Mexico
Dutch
Vishay
SQD30N05-20L_GE3
278-SQD30N05-20L_GE3
PDF Datasheet
Power Field-Effect Transistor, 30A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
20 weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Package/Case
TO-252
Continuous Drain Current (ID)
30A
Drain to Source Voltage (Vdss)
55V
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Mount
Surface Mount
SQD30N05-20L_GE3 Description
Power Field-Effect Transistor, 30A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
FAQ
Is SQD30N05-20L_GE3 currently in stock?
SQD30N05-20L_GE3 is currently available on an inquiry basis. Please contact us for the latest stock information.
Are there related or alternative parts for SQD30N05-20L_GE3?
What voltage specification is listed for SQD30N05-20L_GE3?
What is the mounting type of SQD30N05-20L_GE3?
What operating temperature range does SQD30N05-20L_GE3 support?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
