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SQJ401EP-T1_GE3
278-SQJ401EP-T1_GE3
PDF Datasheet
Power Field-Effect Transistor, 32A I(D), 12V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
25 weeks
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Tech Specifications
Continuous Drain Current (ID)
32A
Fall Time
166ns
Gate to Source Voltage (Vgs)
8V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Mount
Surface Mount
Number of Elements
1
Packaging
Tape and Reel
SQJ401EP-T1_GE3 Description
Power Field-Effect Transistor, 32A I(D), 12V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
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