Vishay_SQJA96EP-T1_GE3
original

Vishay
SQJA96EP-T1_GE3

278-SQJA96EP-T1_GE3
PDF Datasheet
Power Field-Effect Transistor, 19.4A I(D), 80V, 0.0215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN
25 weeks

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APAC
ISO9001
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ISO45001
ISO14001
Original

Tech Specifications

Max Operating Temperature
175
Number of Terminals
4
Min Operating Temperature
-55
Terminal Position
SINGLE
Number of Elements
1
REACH
unknown
Military Spec
False

SQJA96EP-T1_GE3 Description

Power Field-Effect Transistor, 19.4A I(D), 80V, 0.0215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN

FAQ

What is SQJA96EP-T1_GE3?
SQJA96EP-T1_GE3 is a Single FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
What operating temperature range does SQJA96EP-T1_GE3 support?
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