


Vishay
SQJB60EP-T1_GE3
278-SQJB60EP-T1_GE3
PDF Datasheet
Power Field-Effect Transistor, 30A I(D), 60V, 0.012ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN
112 weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
Number of Terminals
4
Min Operating Temperature
-55
Terminal Position
SINGLE
Number of Elements
2
RoHS
Yes
Eccn Code
EAR99
REACH
unknown
Military Spec
False
SQJB60EP-T1_GE3 Description
Power Field-Effect Transistor, 30A I(D), 60V, 0.012ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN
FAQ
What is SQJB60EP-T1_GE3?
SQJB60EP-T1_GE3 is a Single FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
What is the standard lead time for SQJB60EP-T1_GE3?
Is SQJB60EP-T1_GE3 currently in stock?
Does SQJB60EP-T1_GE3 have quantity-based pricing?
What operating temperature range does SQJB60EP-T1_GE3 support?
Availability
(In Stock :
110 )
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.94628 | $0.95 |
| 10+ | $0.92400 | $9.24 |
| 30+ | $0.90857 | $27.26 |
ADD TO CART
QUICK ORDER
Unit Price $0.94628
Subtotal $0.95



.png)























.png?x-oss-process=image/format,webp/resize,h_32)










