Vishay_SQJB60EP-T1_GE3
original

Vishay
SQJB60EP-T1_GE3

278-SQJB60EP-T1_GE3
PDF Datasheet
Power Field-Effect Transistor, 30A I(D), 60V, 0.012ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN
112 weeks

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ISO9001
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ISO45001
ISO14001
Original

Tech Specifications

Number of Terminals
4
Min Operating Temperature
-55
Terminal Position
SINGLE
Number of Elements
2
RoHS
Yes
Eccn Code
EAR99
REACH
unknown
Military Spec
False

SQJB60EP-T1_GE3 Description

Power Field-Effect Transistor, 30A I(D), 60V, 0.012ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN

FAQ

What is SQJB60EP-T1_GE3?
SQJB60EP-T1_GE3 is a Single FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
What is the standard lead time for SQJB60EP-T1_GE3?
Is SQJB60EP-T1_GE3 currently in stock?
Does SQJB60EP-T1_GE3 have quantity-based pricing?
What operating temperature range does SQJB60EP-T1_GE3 support?
Availability (In Stock : 110 )
Quantity Unit Price Ext. Price
1+ $0.94628 $0.95
10+ $0.92400 $9.24
30+ $0.90857 $27.26
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Unit Price $0.94628
Subtotal $0.95
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