


Vishay
SQM60030E_GE3
278-SQM60030E_GE3
PDF Datasheet
Power Field-Effect Transistor, 120A I(D), 80V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
25 weeks
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Number of Elements
1
RoHS
Yes
Eccn Code
EAR99
REACH
unknown
Military Spec
False
SQM60030E_GE3 Description
Power Field-Effect Transistor, 120A I(D), 80V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2
FAQ
What is SQM60030E_GE3?
SQM60030E_GE3 is a Single FETs, MOSFETs from Vishay. This product page provides its main specifications, pricing information, availability, and inquiry options.
What package or case is SQM60030E_GE3 available in?
Is SQM60030E_GE3 currently in stock?
What is the standard lead time for SQM60030E_GE3?
Are there related or alternative parts for SQM60030E_GE3?



.png)























.png?x-oss-process=image/format,webp/resize,h_32)










