Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
| Part # | Manufacturer | Description | Availability | Pricing | Quantity |
|---|---|---|---|---|---|
GC11N65D5Single FETs, MOSFETs | Goford Semiconductor | MOSFET N-CH 650V 11A DFN5*6-8L | 10000 | - | |
G16P03SSingle FETs, MOSFETs | Goford Semiconductor | MOSFET P-CH 30V 16A SOP-8 | 100000 | - | |
G08N06SSingle FETs, MOSFETs | Goford Semiconductor | N60V, RD(MAX)<30M@10V,RD(MAX)<40 | 8000 | - | |
60N06Single FETs, MOSFETs | Goford Semiconductor | MOSFET N-CH 60V 50A TO-252 | 20000 | - | |
2302Single FETs, MOSFETs | Goford Semiconductor | MOSFET N-CH 20V 4.3A SOT-23 | 300000 | - | |
G700P06JSingle FETs, MOSFETs | Goford Semiconductor | P-60V,-23A,RD(MAX)<70M@-10V,VTH- | 3000 | - | |
G630JSingle FETs, MOSFETs | Goford Semiconductor | MOSFET N-CH 200V 9A TO-251 | 2000 | - | |
G2304Single FETs, MOSFETs | Goford Semiconductor | MOSFET N-CH 30V 3.6A SOT-23 | 30000 | - | |
G06N10Single FETs, MOSFETs | Goford Semiconductor | N100V,RD(MAX)<240M@10V,VTH1.2V~3 | 4752 | - | |
GT080N10KSingle FETs, MOSFETs | Goford Semiconductor | MOSFET N-CH 100V 65A TO-252 | 10000 | - | |
G160P03KISingle FETs, MOSFETs | Goford Semiconductor | P-30V,-30A,RD(MAX)<16M@-10V,VTH- | 5000 | - | |
G04P10HESingle FETs, MOSFETs | Goford Semiconductor | P-100V,-4A,RD(MAX)<200M@-10V,VTH | 20000 | - | |
G3401LSingle FETs, MOSFETs | Goford Semiconductor | MOSFET P-CH 30V 4.4A SOT-23-3L | 150000 | - | |
G23N06KSingle FETs, MOSFETs | Goford Semiconductor | MOSFET N-CH 60V 23A TO-252 | 30000 | - | |
GT013N04TISingle FETs, MOSFETs | Goford Semiconductor | N40V, 220A,RD<2.5M@10V,VTH2.0V~5 | 66 | - | |
G220P02D2Single FETs, MOSFETs | Goford Semiconductor | MOSFET P-CH 20V 8A DFN2*2-6L | 9000 | - | |
GC20N65TSingle FETs, MOSFETs | Goford Semiconductor | MOSFET N-CH 650V 20A TO-220 | 4000 | - | |
G30N03D3Single FETs, MOSFETs | Goford Semiconductor | N30V,RD(MAX)<7M@10V,RD(MAX)<12M@ | 10000 | - | |
G10P03Single FETs, MOSFETs | Goford Semiconductor | MOSFET P-CH 30V 10A DFN3*3-8L | 5000 | - | |
630ATSingle FETs, MOSFETs | Goford Semiconductor | N200V,RD(MAX)<250M@10V,RD(MAX)<3 | 87 | - | |
G10N10ASingle FETs, MOSFETs | Goford Semiconductor | MOSFET N-CH 100V 10A TO-252 | 20000 | - | |
G15N06KSingle FETs, MOSFETs | Goford Semiconductor | N-CH, 60V,15A,RD(MAX)<45M@10V,RD | 12301 | - | |
G65P06KSingle FETs, MOSFETs | Goford Semiconductor | P60V,RD(MAX)<18M@-10V,VTH-2V~-3. | 40000 | - | |
G45P02D3Single FETs, MOSFETs | Goford Semiconductor | MOSFET P-CH 20V 45A DFN3*3-8L | 100000 | - | |
GT080N10MSingle FETs, MOSFETs | Goford Semiconductor | N100V, 70A,RD<7.5M@10V,VTH1V~3V, | 1600 | - |