Fairchild (onsemi)_FDV301N
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Fairchild (onsemi)
FDV301N

2088-FDV301N
MOSFETs N-Ch Digital
11 Weeks

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Tech Specifications

Unit Weight
0.000282 oz
Configuration
Single
Id - Continuous Drain Current
220 mA
Product
MOSFET Small Signals
Channel Mode
Enhancement
Fall Time
6 ns
RoHS
RoHS Compliant
Qg - Gate Charge
700 pC
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FDV301N Description

FDV301N Description

The FDV301N by Fairchild (now onsemi) is a high-performance N-Channel Digital MOSFET designed for small-signal switching applications. Built with silicon (Si) technology, this single-channel enhancement-mode FET offers a compact SMD/SMT footprint (2.9mm × 1.3mm × 1.2mm) and RoHS compliance, making it ideal for space-constrained, environmentally conscious designs. With a drain-source breakdown voltage (Vds) of 25V and continuous drain current (Id) of 220mA, it balances efficiency and robustness for low-power digital circuits. Its low gate charge (Qg) of 700pC and fast switching times (rise/fall time: 6ns) ensure minimal power loss and high-speed operation.

FDV301N Features

  • Low Rds On: drain-source resistance enhances conduction efficiency.
  • Precision Threshold: Gate-source threshold voltage (Vgs th) of 700mV ensures reliable turn-on.
  • Fast Switching: Typical turn-on/off delays of 3.2ns/3.5ns optimize high-frequency performance.
  • Thermal Resilience: Operates up to +150°C with 350mW power dissipation (Pd).
  • Compact & Lightweight: 0.000282 oz unit weight in a reel-packaged SMD form factor.
  • Forward Transconductance: Min 0.2S for consistent gain in amplification stages.

FDV301N Applications

The FDV301N excels in:

  • Portable Electronics: Power management in wearables, IoT sensors, and handheld devices.
  • Signal Switching: Load drivers, multiplexers, and logic-level shifters.
  • Battery-Powered Systems: Low-voltage DC-DC converters and battery protection circuits.
  • High-Speed Digital Interfaces: PWM controllers, LED drivers, and gate drive circuits.

Conclusion of FDV301N

The FDV301N stands out for its miniaturized design, fast switching, and energy efficiency, making it a superior choice for modern digital and mixed-signal applications. Its combination of low gate charge, thermal stability, and precise threshold control outperforms comparable MOSFETs in reliability and speed-critical scenarios. Engineers seeking a cost-effective, RoHS-compliant solution for low-power switching will find the FDV301N an optimal fit.

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