The AUIRFR3504Z from Infineon Technologies is an N-channel HEXFET® power MOSFET designed for high-efficiency switching applications. With a 40V drain-to-source voltage (Vdss) and 42A continuous drain current (Id), it offers robust performance in power management circuits. This surface-mount device features a low on-resistance (Rds(on)) of 9mΩ at 10V gate drive, minimizing conduction losses. Its 1510pF input capacitance (Ciss) and 45nC total gate charge (Qg) ensure fast switching, making it suitable for high-frequency applications. Although marked as obsolete, it remains a reliable choice for legacy designs due to its 90W power dissipation (Tc) and ±20V gate-source voltage (Vgs) tolerance.
Ideal for:
The AUIRFR3504Z excels in high-current, low-loss applications, leveraging Infineon’s HEXFET® technology for reliability. While obsolete, its low Rds(on), high current capability, and fast switching make it a strong candidate for retrofits or designs prioritizing proven performance. Engineers should evaluate alternatives for new designs but can rely on this MOSFET for robust operation in power electronics.
Download datasheets and manufacturer documentation for AUIRFR3504Z