Infineon Technologies_AUIRFR3504Z

Infineon Technologies
AUIRFR3504Z  
Single FETs, MOSFETs

AUIRFR3504Z
278-AUIRFR3504Z
Ersa
Infineon Technologies-AUIRFR3504Z-datasheets-5515945.pdf
MOSFET N-CH 40V 42A DPAK
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AUIRFR3504Z Description

AUIRFR3504Z Description

The AUIRFR3504Z from Infineon Technologies is an N-channel HEXFET® power MOSFET designed for high-efficiency switching applications. With a 40V drain-to-source voltage (Vdss) and 42A continuous drain current (Id), it offers robust performance in power management circuits. This surface-mount device features a low on-resistance (Rds(on)) of 9mΩ at 10V gate drive, minimizing conduction losses. Its 1510pF input capacitance (Ciss) and 45nC total gate charge (Qg) ensure fast switching, making it suitable for high-frequency applications. Although marked as obsolete, it remains a reliable choice for legacy designs due to its 90W power dissipation (Tc) and ±20V gate-source voltage (Vgs) tolerance.

AUIRFR3504Z Features

  • Low Rds(on): 9mΩ @ 42A, 10V reduces power loss in high-current paths.
  • High Current Handling: 42A continuous drain current supports demanding loads.
  • Fast Switching: Optimized gate charge (45nC) and capacitance for efficient PWM applications.
  • Robust Construction: HEXFET® technology ensures durability and thermal stability.
  • Compliance: ROHS3 compliant and REACH unaffected, meeting environmental standards.
  • Wide Vgs Range: ±20V gate drive flexibility enhances design compatibility.

AUIRFR3504Z Applications

Ideal for:

  • DC-DC Converters: Efficient power conversion in automotive and industrial systems.
  • Motor Drives: High-current switching in brushed/brushless motor controllers.
  • Power Supplies: Synchronous rectification in SMPS designs.
  • Battery Management: Load switching in portable and energy storage systems.
  • Legacy Upgrades: Replacement for obsolete MOSFETs in existing hardware.

Conclusion of AUIRFR3504Z

The AUIRFR3504Z excels in high-current, low-loss applications, leveraging Infineon’s HEXFET® technology for reliability. While obsolete, its low Rds(on), high current capability, and fast switching make it a strong candidate for retrofits or designs prioritizing proven performance. Engineers should evaluate alternatives for new designs but can rely on this MOSFET for robust operation in power electronics.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package

AUIRFR3504Z Documents

Download datasheets and manufacturer documentation for AUIRFR3504Z

Ersa AUIRFR3504Z      
Ersa Package Drawing Update 19/Aug/2015      
Ersa Part Number Guide      
Ersa AUIRFR3504Z      
Ersa Mult Dev Label Chgs 8/Sep/2021      

Shopping Guide

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