Infineon Technologies_IPD60R3K3C6
original

Infineon Technologies
IPD60R3K3C6

278-IPD60R3K3C6
PDF Datasheet
MOSFET N-CH 600V 1.7A TO252-3

Why Choose Us?

Professional Platform

B2B & B2C purchasing

Delivery at full speed

1-2 days delivery

Wide variety

Original manufacturers

365 days guarantee

Responsible quality
APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original

Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
93 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs
4.6 nC @ 10 V
Product Status
Obsolete
Supplier Device Package
PG-TO252-3
Drain to Source Voltage (Vdss)
600 V
Power Dissipation (Max)
18.1W (Tc)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Show More

IPD60R3K3C6 Description

IPD60R3K3C6 Description

The IPD60R3K3C6 is a high-performance MOSFET (Metal Oxide) from Infineon Technologies, designed for demanding applications requiring high voltage and current capabilities. This N-channel device operates at a drain-source voltage of 600V and can handle a continuous drain current of 1.7A at 25°C. With a maximum gate-source voltage of ±20V, the IPD60R3K3C6 offers robust performance in various electronic systems.

IPD60R3K3C6 Features

  • High Voltage and Current Ratings: The IPD60R3K3C6 is designed to handle high voltages up to 600V and continuous currents up to 1.7A, making it suitable for power electronics applications.
  • Low On-Resistance: With a maximum on-resistance (Rds On) of 3.3Ω at 500mA and 10V, the IPD60R3K3C6 offers low power dissipation and high efficiency.
  • Fast Switching Speeds: The device has a low gate threshold voltage (Vgs(th)) of 3.5V at 40µA, enabling fast switching and reducing power losses.
  • Surface Mount Technology: The IPD60R3K3C6 is available in a surface-mount package, facilitating integration into compact and densely populated circuits.
  • REACH Unaffected: This device is not affected by the Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH) regulation, ensuring compliance with environmental standards.

IPD60R3K3C6 Applications

The IPD60R3K3C6 is ideal for a variety of applications where high voltage and current handling capabilities are required, including:

  • Power Supplies: The high voltage and current ratings make the IPD60R3K3C6 suitable for power supply designs, particularly in applications requiring high efficiency and low power dissipation.
  • Motor Controls: The device's ability to handle high currents and voltages makes it an excellent choice for motor control applications, such as industrial automation and robotics.
  • Automotive Electronics: The IPD60R3K3C6 can be used in automotive electronics, such as electric vehicle charging systems and power management circuits.

Conclusion of IPD60R3K3C6

The IPD60R3K3C6 from Infineon Technologies is a high-performance MOSFET designed for demanding applications requiring high voltage and current capabilities. Its low on-resistance, fast switching speeds, and surface-mount technology make it an excellent choice for power supplies, motor controls, and automotive electronics. While the device is now considered obsolete, it remains a reliable option for existing designs that require its specific performance characteristics.

FAQ

Is IPD60R3K3C6 currently in stock?
IPD60R3K3C6 is currently available on an inquiry basis. Please contact us for the latest stock information.
What voltage specification is listed for IPD60R3K3C6?
What is IPD60R3K3C6?
What operating temperature range does IPD60R3K3C6 support?
What package or case is IPD60R3K3C6 available in?
Quick Quote
ADD TO RFQ LIST

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ