MT25QL01GBBB8E12-0AAT
Micron Technology_MT25QL01GBBB8E12-0AAT
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Micron Technology
MT25QL01GBBB8E12-0AAT

774-MT25QL01GBBB8E12-0AAT
PDF Datasheet
IC FLASH 1GBIT SPI 24TPBGA
6 Weeks

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Tech Specifications

Clock Frequency
133 MHz
Unit Weight
0.201503 oz
Program Current (mA)
35
Part Status Code
Production
Number of Components
2
PPAP
Unknown
Automotive
Yes
RoHS
RoHS Compliant
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MT25QL01GBBB8E12-0AAT Description

Micron Technology Serial NOR Flash
✔ Active RoHS Compliant
Part Number
MT25QL01GBBB8E12-0AAT
Quad SPI 1 Gb (128 MB) 133 MHz (DDR) T-PBGA-24
Max Frequency
133 MHz
DDR / Quad I/O
Read throughput: 532 Mb/s

Product Overview

The Micron MT25QL01GBBB8E12-0AAT is a high-density 1 Gb (128 MB) Serial NOR Flash memory featuring a Quad SPI interface with DDR (Double Data Rate) support. Operating from a 2.7 V – 3.6 V supply, it delivers read speeds up to 133 MHz (532 Mb/s in quad‑DDR mode). Housed in a compact 24-ball T‑PBGA package (6×8 mm), this device is designed for code shadowing, data storage, and execute‑in‑place (XIP) applications. The “AAT” suffix denotes an automotive grade with extended temperature range (–40°C to +125°C), making it ideal for in‑vehicle infotainment, ADAS, and telematics.

▸ Memory Configuration
  • Density: 1 Gb (128 MB)
  • Architecture: 512 sectors (256 KB each)
  • Sector Erase: 256 KB (typical)
  • Page Program: 256 bytes
  • Number of Pages: 524,288
▸ Performance & Speed
  • Max Clock (DDR): 133 MHz
  • Read Throughput: 532 Mb/s (quad‑DDR)
  • Single‑SPI Read: 133 MHz (266 Mb/s)
  • Program Time (page): 0.7 ms (typ)
  • Erase Time (sector): 0.4 s (typ)
▸ Electrical & Package
  • VCC: 2.7 V – 3.6 V
  • VIO: 1.65 V – 3.6 V
  • Package: 24‑ball T‑PBGA (6×8 mm, 0.8 mm pitch)
  • Operating Temp: –40°C to +125°C (AAT)
  • Interface: SPI / Quad SPI / DDR
▸ Key Features
  • Automotive‑grade (AAT) – AEC‑Q100 qualified
  • Quad‑DDR for maximum read performance
  • XIP (eXecute‑In‑Place) support
  • Advanced sector protection (lock/unlock)
  • Erase‑suspend / resume for real‑time responsiveness
  • Deep power‑down mode (1 µA typ)
Ordering & Compliance
Part Number: MT25QL01GBBB8E12‑0AAT
Package Code: B8E (T‑PBGA 24, 6×8 mm)
Lead Finish: SnAgCu (SAC)
Halogen‑free: Yes  |  RoHS: Yes
Temperature Grade: AAT (Automotive, –40°C to +125°C)
Key Applications
Automotive Infotainment ADAS Systems Instrument Clusters Telematics & V2X Industrial Motor Drives
Availability
In Production
Tape & Reel (Automotive)
Micron® — Industry‑leading memory & storage solutions. Specifications subject to change without notice. All data provided for reference.

FAQ

What is the memory density and organization of this device?
The MT25QL01GBBB8E12-0AAT is a 1 Gbit high-performance Serial NOR Flash memory device. It is organized as 128M x 8, meaning it has a 128 million word memory array with an 8-bit wide data bus. The device uses a stacked configuration of two 512Mb die and is manufactured using 45 nm process technology.
What is the operating voltage and speed?
What is the operating temperature range and physical package?
What is the lifecycle status of this part?
Availability (In Stock : 23712 )
Quantity Unit Price Ext. Price
1+ $15.40880 $15.41
10+ $14.28416 $142.84
25+ $13.83571 $345.89
50+ $13.49850 $674.92
100+ $13.16454 $1316.45
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Unit Price $15.40880
Subtotal $15.41
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