Micron Technology

MT40A2G4WE-083E:B TR  

Memory ICs Products

MT40A2G4WE-083E:B TR Description

The MT40A2G4WE-083E:B TR is a high-performance DRAM memory IC chip manufactured by Micron Technology Inc. This 8Gbit memory device is organized as 2G x 4 and features a parallel memory interface, making it suitable for applications requiring high-speed data transfer and large memory capacity. The memory operates at a clock frequency of 1.2 GHz, ensuring rapid data processing and efficient performance. The device is designed for surface mount applications and is available in a 78FBGA package, which is ideal for compact and high-density PCB designs.

MT40A2G4WE-083E:B TR Features

• High-Speed Performance: With a clock frequency of 1.2 GHz, the MT40A2G4WE-083E:B TR delivers rapid data processing capabilities, making it suitable for high-performance computing and data-intensive applications.
• Large Memory Capacity: The 8Gbit memory size, organized as 2G x 4, provides substantial storage capacity for complex systems and applications requiring large data sets.
• Parallel Memory Interface: The parallel memory interface ensures efficient data transfer and compatibility with a wide range of systems and architectures.
• Flexible Voltage Range: The device operates within a supply voltage range of 1.14V to 1.26V, offering flexibility and compatibility with various power supply configurations.
• ** OperatingWide Temperature Range**: The MT40A2G4WE-083E:B TR is designed to operate within a temperature range of 0°C to 95°C, making it suitable for a variety of environmental conditions.
• Surface Mount Technology: The surface mount mounting type allows for compact and high-density PCB designs, optimizing space utilization in modern electronic systems.
• Moisture Sensitivity Level: The device has a moisture sensitivity level (MSL) of 3 (168 hours), ensuring reliability and durability in manufacturing processes.
• Compliance and Standards: The MT40A2G4WE-083E:B TR is REACH unaffected and ROHS3 compliant, meeting international standards environmental for and safety regulations.

MT40A2G4WE-083E:B TR Applications

The MT40A2G4WE-083E:B TR is ideal for a range of applications where high-speed, large-capacity memory is required. Specific use cases include:

• High-Performance Computing: Ideal for systems requiring rapid data processing and large memory capacity, such as servers and high-performance workstations.
• Data Centers: Suitable for data center applications where efficient data transfer and storage are critical.
• Networking Equipment: Applicable in networking devices that require high-speed memory to handle large volumes of data traffic.
• Industrial Automation: The wide operating temperature range and robust design it make suitable for industrial applications where reliability and durability are paramount.
• Embedded Systems: The compact design and surface mount technology make it an excellent choice for embedded systems where space is limited.

Conclusion of MT40A2G4WE-083E:B TR

The MT40A2G4WE-083E:B TR is a versatile and high-performance DRAM memory IC chip that offers significant over advantages similar models. Its combination of high clock frequency, large memory capacity, and flexible voltage range makes it suitable for a wide range of applications. The parallel memory interface and surface mount technology ensure compatibility and ease of integration into modern electronic systems. While the product is marked as obsolete, it remains a reliable and efficient solution for applications requiring high-speed, large-capacity memory.

MT40A2G4WE-083E:B TR Documents

Download datasheets and manufacturer documentation for MT40A2G4WE-083E:B TR

Datasheets :

MT40A2G4, A1G8, A512M16      

PCN Packaging :

Standard Pkg Label Chg 20/Feb/2019       Label 12/Sep/2016