Microsemi_JAN2N1486
Microsemi_JAN2N1486
original

Microsemi
JAN2N1486

2087-JAN2N1486
PDF Datasheet
Power Bipolar Transistor, 3A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-8, Metal, 3 Pin, TO-8, 3 PIN
22 Weeks

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Tech Specifications

Package/Case
TO-8-3
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
55V
Collector-emitter Voltage-Max
750mV
Max Collector Current
3A
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.75W
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JAN2N1486 Description

Power Bipolar Transistor, 3A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-8, Metal, 3 Pin, TO-8, 3 PIN

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