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Microsemi
JANTX2N6798
278-JANTX2N6798
Small Signal Field-Effect Transistor, 5.5A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
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Tech Specifications
Contact Plating
Tin, Lead
Continuous Drain Current (ID)
5.5A
Drain to Source Voltage (Vdss)
200V
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
JANTX2N6798 Description
N-Channel 200 V 5.5A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-205AF (TO-39)
FAQ
What is the mounting type of JANTX2N6798?
JANTX2N6798 uses a Through Hole mounting style based on the listed product specifications.
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