


Microsemi
JAN2N6796U
278-JAN2N6796U
PDF Datasheet
Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-16
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Responsible qualityTech Specifications
Package/Case
CLCC
Continuous Drain Current (ID)
8A
Drain to Source Voltage (Vdss)
100V
Fall Time
45ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
JAN2N6796U Description
N-Channel 100 V 8A (Tc) 800mW (Ta), 25W (Tc) Surface Mount 18-ULCC (9.14x7.49)
FAQ
Are there related or alternative parts for JAN2N6796U?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What operating temperature range does JAN2N6796U support?
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