Microsemi_JAN2N6796U
Microsemi_JAN2N6796U
original

Microsemi
JAN2N6796U

278-JAN2N6796U
PDF Datasheet
Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-16

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Tech Specifications

Package/Case
CLCC
Continuous Drain Current (ID)
8A
Drain to Source Voltage (Vdss)
100V
Fall Time
45ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
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JAN2N6796U Description

N-Channel 100 V 8A (Tc) 800mW (Ta), 25W (Tc) Surface Mount 18-ULCC (9.14x7.49)

FAQ

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