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Microsemi
JAN2N6798U
278-JAN2N6798U
PDF Datasheet
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-18
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Tech Specifications
Package/Case
CLCC
Continuous Drain Current (ID)
5.5A
Drain to Source Voltage (Vdss)
200V
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
JAN2N6798U Description
N-Channel 200 V 5.5A (Tc) 800mW (Ta), 25W (Tc) Surface Mount 18-ULCC (9.14x7.49)
FAQ
What package or case is JAN2N6798U available in?
JAN2N6798U is available in the CLCC package / case.
Is JAN2N6798U currently in stock?
What is the mounting type of JAN2N6798U?
What voltage specification is listed for JAN2N6798U?
What operating temperature range does JAN2N6798U support?
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