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Microsemi
JAN2N6796
278-JAN2N6796
Small Signal Field-Effect Transistor, 8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
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Tech Specifications
Package/Case
TO-39
Continuous Drain Current (ID)
8A
Drain to Source Voltage (Vdss)
100V
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
JAN2N6796 Description
N-Channel 100 V 8A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39
FAQ
What is the mounting type of JAN2N6796?
JAN2N6796 uses a Through Hole mounting style based on the listed product specifications.
What is JAN2N6796?
What voltage specification is listed for JAN2N6796?
What package or case is JAN2N6796 available in?
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