Microsemi_JAN2N6800
original

Microsemi
JAN2N6800

278-JAN2N6800
Small Signal Field-Effect Transistor, 3A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

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Tech Specifications

Package/Case
TO-39
Continuous Drain Current (ID)
3A
Drain to Source Voltage (Vdss)
400V
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Through Hole
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JAN2N6800 Description

N-Channel 400 V 3A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39

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JAN2N6800 is a Single FETs, MOSFETs from Microsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
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