onsemi_2N5551TAR
original

onsemi
2N5551TAR

276-2N5551TAR
PDF Datasheet
NPN BJT 160V 600mA 300MHz TO-92 Transistor

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ISO9001
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ISO45001
ISO14001
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Tech Specifications

Package/Case
TO-92-3
Collector Base Voltage (VCBO)
180V
Collector Emitter Breakdown Voltage
160V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
160V
Collector-emitter Voltage-Max
200mV
Current Rating
600mA
Emitter Base Voltage (VEBO)
6V
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2N5551TAR Description

Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 625 mW Through Hole TO-92-3

FAQ

What package or case is 2N5551TAR available in?
2N5551TAR is available in the TO-92-3 package / case.
Are there related or alternative parts for 2N5551TAR?
What operating temperature range does 2N5551TAR support?
What voltage specification is listed for 2N5551TAR?
What is 2N5551TAR?
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