onsemi

2N6036G

2N6036G Description

The 2N6036G from onsemi is a PNP Darlington transistor designed for high-current, medium-voltage applications. With a collector-emitter breakdown voltage (Vce) of 80V and a maximum collector current (Ic) of 4A, this transistor is optimized for power amplification and switching tasks. Its Darlington configuration ensures high current gain (hFE ≥ 750 @ 2A, 3V), making it suitable for driving heavy loads with minimal base current. The device features a low saturation voltage (3V @ 40mA, 4A), enhancing efficiency in switching applications. Packaged in a TO-126 through-hole format, it is robust and easy to integrate into various circuit designs.

2N6036G Features

• High Current Gain (hFE): 750 (min) @ 2A, 3V, reducing drive requirements.
• Low Saturation Voltage: 3V @ 40mA, 4A, minimizing power losses.
• High Voltage Tolerance: 80V Vce (max), suitable for medium-voltage circuits.
• Power Handling: 40W max dissipation, ideal for power applications.
• RoHS3 Compliant & REACH Unaffected: Environmentally friendly and reliable.
• TO-126 Package: Robust through-hole mounting for durability.

2N6036G Applications

The 2N6036G excels in applications requiring high current amplification with minimal drive:

• Motor Control: Efficiently drives DC motors in industrial and automotive systems.
• Power Supplies: Used in linear regulators and switching power stages.
• Audio Amplifiers: Delivers high gain for low-distortion audio outputs.
• Relay/Driver Circuits: Ideal for inductive load switching due to low saturation losses.
• Automotive Electronics: Suitable for ignition systems and power management.

Conclusion of 2N6036G

The 2N6036G is a high-performance PNP Darlington transistor offering exceptional current gain, low saturation voltage, and robust power handling. Its 80V breakdown voltage and 4A current rating make it versatile for power amplification, switching, and motor control. While obsolete, its TO-126 package and RoHS3 compliance ensure reliability in legacy designs. Engineers seeking a cost-effective, high-gain solution for medium-power applications will find this transistor highly effective.