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2SC5658RM3T5G

2SC5658RM3T5G Description

The 2SC5658RM3T5G is a high-performance NPN transistor designed and manufactured by onsemi. This single bipolar transistor is known for its exceptional technical specifications and outstanding performance benefits, making it an ideal choice for various applications in the electronics industry.

2SC5658RM3T5G Features

• Operating Temperature: The 2SC5658RM3T5G can operate at a maximum junction temperature of 150°C, ensuring reliable performance in high-temperature environments.
• Frequency - Transition: With a transition frequency of 180MHz, this transistor is suitable for high-speed applications requiring fast switching capabilities.
• Current - Collector (Ic) (Max): The maximum collector current is 100 mA, allowing for efficient power handling in various electronic circuits.
• Vce Saturation (Max) @ Ib, Ic: The maximum Vce saturation voltage is 400mV at 5mA and 60mA, ensuring low power dissipation and high efficiency.
• DC Current Gain (hFE) (Min) @ Ic, Vce: The minimum DC current gain is 215 at 1mA and 6V, providing consistent performance across different operating conditions.
• Power - Max: The maximum power dissipation is 260 mW, making it suitable for low to medium power applications.
• Voltage - Collector Emitter Breakdown (Max): The maximum collector-emitter breakdown voltage is 50V, ensuring safe operation in high-voltage circuits.
• Mounting Type: Surface Mount, facilitating easy integration into compact and densely populated PCB designs.
• RoHS Status: ROHS3 Compliant, ensuring environmental responsibility and compliance with global regulations.

2SC5658RM3T5G Applications

The 2SC5658RM3T5G is an ideal choice for various applications where high performance, reliability, and efficiency are critical. Some specific use cases include:

1. Audio Amplifiers: The high-frequency capabilities and low power dissipation make it suitable for audio amplifiers, ensuring clear and distortion-free sound reproduction.
2. Switching Regulators: The high transition frequency and low Vce saturation voltage make it an excellent choice for switching regulators, providing efficient power conversion and regulation.
3. RF Applications: The high-frequency performance and low noise characteristics make it suitable for RF applications, such as transmitters and receivers, ensuring reliable signal transmission and reception.
4. Automotive Electronics: The high operating temperature and robust performance make it ideal for automotive electronics, such as engine control units and sensor interfaces, ensuring reliable operation in harsh environments.

Conclusion of 2SC5658RM3T5G

In conclusion, the 2SC5658RM3T5G is a versatile and high-performance NPN transistor that offers exceptional technical specifications and performance benefits. Its unique features, such as high-frequency capabilities, low power dissipation, and robust performance, make it an ideal choice for a wide range of applications in the electronics industry. With its commitment to environmental responsibility and compliance with global regulations, the 2SC5658RM3T5G is a reliable and efficient solution for your electronic design needs.