onsemi_BD13810STU
original

onsemi
BD13810STU

276-BD13810STU
PDF Datasheet
PNP BJT Transistor, 60V, 1.5A, TO-126, Through Hole

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APAC
ISO9001
Quality Policy
ISO45001
ISO14001
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Tech Specifications

Package/Case
TO-126
Collector Base Voltage (VCBO)
-60V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Current Rating
-1.5A
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BD13810STU Description

Bipolar (BJT) Transistor PNP 60 V 1.5 A 1.25 W Through Hole TO-126-3

FAQ

What is the mounting type of BD13810STU?
BD13810STU uses a Through Hole mounting style based on the listed product specifications.
What operating temperature range does BD13810STU support?
Are there related or alternative parts for BD13810STU?
Is BD13810STU currently in stock?
What package or case is BD13810STU available in?
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