onsemi_FCA16N60N
original

onsemi
FCA16N60N

278-FCA16N60N
PDF Datasheet
600V 16A N-Channel Power MOSFET, 199mR RdsOn, TO-3P

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Tech Specifications

Continuous Drain Current (ID)
16A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
170mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
199mR
Element Configuration
Single
Fall Time
20.2ns
Gate to Source Voltage (Vgs)
30V
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FCA16N60N Description

N-Channel 600 V 16A (Tc) 134.4W (Tc) Through Hole TO-3PN

FAQ

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FCA16N60N is a Single FETs, MOSFETs from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
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