onsemi_FCP16N60N
original

onsemi
FCP16N60N

278-FCP16N60N
PDF Datasheet
600V N-Channel Power MOSFET, 16A, 199mR, TO-220
99 weeks

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Tech Specifications

Package/Case
TO-220
Continuous Drain Current (ID)
16A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
170mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
199mR
Element Configuration
Single
Fall Time
20.2ns
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FCP16N60N Description

N-Channel 600 V 16A (Tc) 134.4W (Tc) Through Hole TO-220-3

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