onsemi_FCP13N60N
original

onsemi
FCP13N60N

278-FCP13N60N
PDF Datasheet
600V 13A N-Channel Power MOSFET, TO-220, 258mR
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Tech Specifications

Package/Case
TO-220-3
Continuous Drain Current (ID)
13A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
244mR
Drain to Source Voltage (Vdss)
600V
Element Configuration
Single
Fall Time
9.8ns
Gate to Source Voltage (Vgs)
30V
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FCP13N60N Description

FCP13N60N Description

The FCP13N60N is a high-performance MOSFET N-CH 600V 13A TO220-3 device manufactured by onsemi. This single FET is designed for applications requiring high power dissipation and voltage handling capabilities. With a maximum drain-source voltage of 600V and a continuous drain current of 13A at 25°C, the FCP13N60N is well-suited for demanding electronic systems.

FCP13N60N Features

  • High Voltage and Current Handling: The FCP13N60N can handle up to 600V drain-source voltage and 13A continuous drain current, making it ideal for high-power applications.
  • Low On-Resistance: With a maximum on-resistance of 258mOhm at 6.5A and 10V, the FCP13N60N offers low power dissipation and high efficiency.
  • Robust Gate Drive: The device has a maximum gate-source voltage of ±30V, providing a wide operating range and flexibility in gate drive circuits.
  • REACH Unaffected and RoHS3 Compliant: The FCP13N60N meets environmental regulations, ensuring compliance with RoHS and REACH directives.
  • Through-Hole Mounting: The TO220-3 package allows for easy integration into existing through-hole designs.

FCP13N60N Applications

The FCP13N60N is well-suited for a variety of high-power applications, including:

  1. Power Supplies: The high voltage and current ratings make it ideal for power supply designs, particularly in industrial and automotive systems.
  2. Motor Control: The FCP13N60N's low on-resistance and high current capabilities make it suitable for motor control applications, such as electric vehicles and industrial automation.
  3. Inverters: The device's high voltage and current ratings make it an excellent choice for inverter designs, particularly in renewable energy systems and power electronics.

Conclusion of FCP13N60N

The FCP13N60N is a high-performance MOSFET designed for demanding high-power applications. Its combination of high voltage and current ratings, low on-resistance, and robust gate drive make it an excellent choice for power supplies, motor control, and inverter designs. While the device is now considered obsolete, its unique features and performance benefits make it a valuable option for existing systems and applications that require its specific capabilities.

FAQ

What is the mounting type of FCP13N60N?
FCP13N60N uses a Through Hole mounting style based on the listed product specifications.
What operating temperature range does FCP13N60N support?
What package or case is FCP13N60N available in?
What is FCP13N60N?
What is the standard lead time for FCP13N60N?
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