onsemi

FCH76N60N

FCH76N60N Description

The FCH76N60N is a high-performance, N-Channel MOSFET from onsemi, designed for applications requiring high power and efficiency. With a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 76A at 25°C, this device is ideal for high-voltage, high-current applications. The FCH76N60N features a low Rds(on) of 36mOhm at 38A and 10V, ensuring minimal power loss and high efficiency. The device is mounted through-hole and comes in a TO247-3 package.

FCH76N60N Features

• 600V drain-source voltage (Vdss) for high-voltage applications
• 76A continuous drain current (Id) at 25°C for high-current applications
• Low Rds(on) of 36mOhm at 38A and 10V for minimal power loss and high efficiency
• N-Channel MOSFET technology for high power and efficiency
• SupreMOS™ series for superior performance and reliability
• Through-hole mounting for easy integration into existing designs
• TO247-3 package for compact and efficient packaging

FCH76N60N Applications

The FCH76N60N is ideal for a variety of high-voltage, high-current applications, including:

1. Power supplies and converters
2. Motor control and drives
3. Industrial automation and control systems
4. Renewable energy systems, such as solar inverters and wind turbines
5. Electric vehicle charging systems

Conclusion of FCH76N60N

The FCH76N60N is a powerful, efficient N-Channel MOSFET from onsemi, offering high voltage and current capabilities in a compact package. Its low Rds(on) and high performance make it an excellent choice for demanding applications in power supplies, motor control, and renewable energy systems. While the FCH76N60N is now considered obsolete, it remains a reliable and high-performing option for legacy systems and applications that require its specific characteristics.