onsemi_FDD8426H
original

onsemi
FDD8426H

289-FDD8426H
PDF Datasheet
Power Field-Effect Transistor

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Tech Specifications

Package/Case
TO-252-5
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
-40V
Drain to Source Voltage (Vdss)
40V
Fall Time
7.5ns
FET Type
N and P-Channel
Input Capacitance
2.735nF
Max Operating Temperature
150°C
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FDD8426H Description

Mosfet Array 40V 12A, 10A 1.3W Surface Mount TO-252 (DPAK)

FAQ

What voltage specification is listed for FDD8426H?
The listed voltage-related specification for FDD8426H is -40V.
Are there related or alternative parts for FDD8426H?
What operating temperature range does FDD8426H support?
What is the mounting type of FDD8426H?
What package or case is FDD8426H available in?
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