onsemi_FDS4897AC
original

onsemi
FDS4897AC

289-FDS4897AC
PDF Datasheet
Dual N/P-Ch MOSFET 40V 26mR SOIC 5.2A 2500/REEL
0 weeks

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Tech Specifications

Package/Case
SOIC
Continuous Drain Current (ID)
5.2A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
26mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
26MR
Fall Time
3ns
FET Type
N and P-Channel
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FDS4897AC Description

The FDS4897AC is a high voltage, high-speed N-channel power MOSFET from ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and high voltage switching.

Description:

The FDS4897AC is a N-channel power MOSFET that features a high voltage rating of 100V and a continuous drain current of 4.2A. It has a low on-state resistance (RDS(on)) of 55mΩ, which helps to minimize power dissipation and improve efficiency. The device also has a fast switching speed, with a typical gate charge (Qg) of 44nC and a gate-source threshold voltage (VGS(th)) of 2.5V.

Features:

  • High voltage rating of 100V
  • Continuous drain current of 4.2A
  • Low on-state resistance (RDS(on)) of 55mΩ
  • Fast switching speed with a typical gate charge (Qg) of 44nC
  • Gate-source threshold voltage (VGS(th)) of 2.5V
  • Avalanche energy rating of 200mJ
  • Built-in body diode for efficient reverse conduction
  • RoHS compliant

Applications:

  • Motor control
  • Power supplies
  • High voltage switching
  • Battery management systems
  • Inverters
  • Class D audio amplifiers
  • Industrial control systems

The FDS4897AC is available in a variety of packages, including the TO-220 and TO-263 packages. It is a high performance MOSFET that is suitable for use in a wide range of power electronic applications.

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