onsemi

FQA44N30

FQA44N30 Description

The FQA44N30 is a high-performance MOSFET N-CH 300V 43.5A TO3PN device manufactured by onsemi. This single FET features a maximum drain-to-source voltage (Vdss) of 300V, a continuous drain current (Id) of 43.5A at 25°C, and a maximum power dissipation of 310W (Tc). The FQA44N30 operates with a maximum gate-source voltage (Vgs) of ±30V and a maximum threshold voltage (Vgs(th)) of 5V at 250µA. This device is designed for through-hole mounting and is packaged in a tube.

FQA44N30 Features

• Maximum drain-to-source voltage (Vdss) of 300V
• Continuous drain current (Id) of 43.5A at 25°C
• Maximum power dissipation of 310W (Tc)
• Maximum gate-source voltage (Vgs) of ±30V
• Maximum threshold voltage (Vgs(th)) of 5V at 250µA
• Through-hole mounting type
• Tube packaging
• Technology: MOSFET (Metal Oxide)
• Series: QFET®
• RoHS3 compliant
• REACH unaffected
• Not applicable for moisture sensitivity level (MSL)
• ECCN: EAR99
• HTSUS: 8541.29.0095

FQA44N30 Applications

The FQA44N30 is ideal for applications requiring high voltage and current capabilities, such as:

• Power switching and amplification
• Motor control and drives
• Industrial automation and control systems
• Renewable energy applications, including solar and wind power systems
• Automotive electronics, including electric vehicle charging systems

Conclusion of FQA44N30

The FQA44N30 is a robust and reliable MOSFET N-CH device designed for high-voltage and high-current applications. Its unique features, such as the QFET® series and through-hole mounting, make it suitable for various industrial and power electronics applications. Although the product is now obsolete, its performance benefits and technical specifications make it a valuable option for legacy systems and applications where high voltage and current capabilities are required.