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FQB19N10LTM

278-FQB19N10LTM
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MOSFET N-CH 100V 19A D2PAK

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ISO45001
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Tech Specifications

Package/Case
TO-263-3
Continuous Drain Current (ID)
19A
Current Rating
19A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
74mR
Drain to Source Voltage (Vdss)
100V
Fall Time
140ns
Gate to Source Voltage (Vgs)
20V
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FQB19N10LTM Description

N-Channel 100 V 19A (Tc) 3.75W (Ta), 75W (Tc) Surface Mount TO-263 (D2PAK)

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