onsemi

FQB50N06LTM

FQB50N06LTM Description

The FQB50N06LTM is a high-performance N-Channel MOSFET from onsemi, designed to meet the demands of modern electronic applications. This device features a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 52.4A at 25°C, making it suitable for a wide range of power management and switching applications. With a maximum power dissipation of 3.75W at ambient temperature and 121W at case temperature, the FQB50N06LTM can handle high-power applications with ease.

FQB50N06LTM Features

• High Drain Current: The FQB50N06LTM can handle a continuous drain current of 52.4A at 25°C, making it ideal for high-power applications.
• Low On-Resistance: With a maximum Rds(on) of 21mΩ at 26.2A and 10V, this MOSFET offers low on-resistance for efficient power management.
• High Input Capacitance: The FQB50N06LTM has a maximum input capacitance (Ciss) of 1630 pF at 25V, ensuring fast switching speeds and minimal signal distortion.
• Low Gate Charge: A maximum gate charge (Qg) of 32 nC at 5V reduces switching losses and improves efficiency.
• Robust Temperature Performance: The device can operate at temperatures up to 150°C, making it suitable for harsh environments.
• Surface Mount Packaging: The FQB50N06LTM is available in a D2PAK package, ideal for surface mount applications and high-density PCB layouts.

FQB50N06LTM Applications

The FQB50N06LTM is well-suited for various applications, including:

• Power Management: Its high drain current and low on-resistance make it ideal for power management applications, such as battery chargers and power supplies.
• Motor Control: The FQB50N06LTM's high current handling capability and low on-resistance make it suitable for motor control applications, including industrial automation and robotics.
• Switching Applications: The device's fast switching speeds and low gate charge make it ideal for high-frequency switching applications, such as inverters and converters.

Conclusion of FQB50N06LTM

The FQB50N06LTM is a versatile and high-performance N-Channel MOSFET from onsemi, offering a combination of high drain current, low on-resistance, and fast switching speeds. Its robust temperature performance and surface mount packaging make it suitable for a wide range of applications, including power management, motor control, and switching applications. While the FQB50N06LTM is now considered obsolete, its unique features and advantages make it a valuable option for legacy systems and applications where high performance and reliability are critical.