onsemi
FQD10N20CTM

278-FQD10N20CTM
PDF Datasheet
200V N-Channel MOSFET, 7.8A, 360mR, DPAK, Tape & Reel
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Tech Specifications

Package/Case
DPAK
Continuous Drain Current (ID)
7.8A
Current Rating
7.8A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
360mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
360mR
Element Configuration
Single
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FQD10N20CTM Description

FQD10N20CTM Description

The FQD10N20CTM is a MOSFET N-CH 200V 7.8A DPAK produced by onsemi. This single FET is designed for high-power applications and offers superior performance in terms of its drain to source voltage, power dissipation, and current handling capabilities. With a drain to source voltage (Vdss) of 200V and a maximum power dissipation of 50W, the FQD10N20CTM is well-suited for applications that require high voltage and power handling. The device is also compliant with the RoHS3 standard, making it an environmentally friendly choice for electronic designs.

FQD10N20CTM Features

  • High Drain to Source Voltage (Vdss): 200V, making it suitable for high-voltage applications.
  • Power Dissipation (Max): 50W, ensuring reliable operation in high-power scenarios.
  • Current - Continuous Drain (Id) @ 25°C: 7.8A, providing robust current handling capabilities.
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V, offering low on-resistance for efficient power management.
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, contributing to fast switching speeds.
  • Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V, ensuring minimal capacitive loading on the gate.
  • Technology: MOSFET (Metal Oxide), providing excellent electrical characteristics and reliability.
  • Mounting Type: Surface Mount, facilitating integration into compact electronic designs.
  • Package: Tape & Reel (TR), making it easy to automate the assembly process.

FQD10N20CTM Applications

The FQD10N20CTM is ideal for a variety of applications where high voltage, power, and current handling are required. Some specific use cases include:

  • Power Supplies: Due to its high voltage and power ratings, the FQD10N20CTM is well-suited for power supply designs.
  • Motor Controls: The device's ability to handle high currents makes it an excellent choice for motor control applications.
  • Industrial Automation: Its robustness and reliability make it suitable for use in industrial automation systems.
  • Automotive Electronics: The FQD10N20CTM can be used in various automotive electronic systems that require high voltage and power handling.

Conclusion of FQD10N20CTM

The FQD10N20CTM is a high-performance MOSFET that offers a combination of high voltage, power, and current handling capabilities. Its unique features, such as low on-resistance and fast switching speeds, make it an excellent choice for a variety of high-power applications. While it is now considered obsolete, its performance benefits and compliance with environmental standards make it a valuable component for legacy systems and applications where high reliability and performance are paramount.

FAQ

Are there related or alternative parts for FQD10N20CTM?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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