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FQD17P06TM

The FQD17P06TM is a high voltage N-channel MOSFET transistor manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.

Description:

The FQD17P06TM is a high voltage N-channel MOSFET transistor that features a high input impedance, low output impedance, and fast switching capabilities. It has a drain-source voltage (VDS) of 60V, a continuous drain current (ID) of 7.4A, and a gate-source voltage (VGS) of -30V. The device is available in a TO-220AB package.

Features:

• High voltage N-channel MOSFET transistor
• Drain-source voltage (VDS) of 60V
• Continuous drain current (ID) of 7.4A
• Gate-source voltage (VGS) of -30V
• High input impedance
• Low output impedance
• Fast switching capabilities
• Available in a TO-220AB package

Applications:

The FQD17P06TM is suitable for use in a variety of power electronic applications, including:

• Motor control
• Power supplies
• Energy management systems
• Industrial control
• Automotive applications
• Switch mode power supplies (SMPS)
• Battery management systems (BMS)
• Inverters
• DC-DC converters

In summary, the FQD17P06TM is a high voltage N-channel MOSFET transistor that is designed for use in a variety of power electronic applications. Its high input impedance, low output impedance, and fast switching capabilities make it well-suited for use in motor control, power supplies, and energy management systems.