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FQD2N100TM

FQD2N100TM is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is a N-channel, logic level device designed for low voltage, high speed switching applications.

Description:

The FQD2N100TM is a N-channel MOSFET with a drain-source voltage (Vds) of 100V, a continuous drain current (Id) of 23.7A at 25°C, and a pulsed drain current (Idm) of 94.8A. It has a logic level gate drive input, making it suitable for use in low voltage circuits. The device is available in a surface mount TO-263-2 package.

Features:

• N-channel, logic level MOSFET
• Vds of 100V
• Continuous drain current (Id) of 23.7A at 25°C
• Pulsed drain current (Idm) of 94.8A
• Logic level gate drive input
• Surface mount TO-263-2 package
• Low on-state resistance (Rds(on))
• Fast switching times
• High input impedance

Applications:

The FQD2N100TM is suitable for a wide range of applications, including:

• Low voltage motor control
• DC-DC converters
• Class D audio amplifiers
• LED lighting
• Power management in portable devices
• Industrial control systems

It is important to note that the FQD2N100TM is a MOSFET and not a BJT transistor, so it has different characteristics and applications compared to a BJT transistor.