onsemi

FQP3P20

FQP3P20 Description

The FQP3P20 is a P-Channel MOSFET from onsemi, designed for high-power applications. With a drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 2.8A at 25°C, this device offers robust performance in demanding electronic systems. The FQP3P20 features a low on-resistance (Rds On) of 2.7 Ohms at 1.4A and 10V, ensuring efficient power delivery. Its maximum gate-source voltage (Vgs) is ±30V, providing flexibility in gate drive requirements. The device is packaged in a through-hole TO220-3 package, making it suitable for a wide range of applications.

FQP3P20 Features

• P-Channel MOSFET with 200V drain-to-source voltage (Vdss)
• Continuous drain current (Id) of 2.8A at 25°C
• Low on-resistance (Rds On) of 2.7 Ohms at 1.4A and 10V
• Maximum gate-source voltage (Vgs) of ±30V
• Through-hole TO220-3 package
• RoHS3 compliant and REACH unaffected
• Moisture sensitivity level (MSL) not applicable
• Suitable for a wide range of high-power applications

FQP3P20 Applications

The FQP3P20 is ideal for applications requiring high voltage and current handling capabilities. Some specific use cases include:

1. Power switching and control in industrial and automotive systems
2. Motor control and driving applications
3. Power supply regulation and management
4. High-voltage signal amplification and processing
5. Protection circuits for sensitive electronic components

Conclusion of FQP3P20

The FQP3P20 is a high-performance P-Channel MOSFET from onsemi, offering robust voltage and current handling capabilities in a through-hole package. Its low on-resistance and wide gate voltage range make it suitable for a variety of high-power applications. While the device is now considered obsolete, it remains a reliable choice for existing systems and applications that require its specific performance characteristics.