The MJD42C1G from onsemi is a high-performance PNP bipolar junction transistor (BJT) designed for power-switching and amplification applications. With a collector-emitter breakdown voltage (Vceo) of 100V and a maximum collector current (Ic) of 6A, it delivers robust performance in demanding circuits. The device features a low saturation voltage (1.5V @ 6A), ensuring efficient power handling with minimal losses. Packaged in an IPAK (TO-251) through-hole format, it is suitable for automated assembly while offering excellent thermal dissipation.
The MJD42C1G is a versatile PNP transistor offering a balance of high voltage tolerance, current capacity, and efficiency. Its low saturation voltage and rugged IPAK package make it superior to similar models in power dissipation and reliability. While marked as obsolete, it remains a viable choice for legacy designs or applications requiring proven performance. Engineers can leverage its capabilities in power switching, amplification, and industrial control systems where durability and efficiency are critical.
Download datasheets and manufacturer documentation for MJD42C1G