onsemi
MJD42C1G  
Single Bipolar Transistors

onsemi
MJD42C1G
276-MJD42C1G
Ersa
onsemi-MJD42C1G-datasheets-11010793.pdf
TRANS PNP 100V 6A IPAK
In Stock : 465

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MJD42C1G Description

MJD42C1G Description

The MJD42C1G from onsemi is a high-performance PNP bipolar junction transistor (BJT) designed for power-switching and amplification applications. With a collector-emitter breakdown voltage (Vceo) of 100V and a maximum collector current (Ic) of 6A, it delivers robust performance in demanding circuits. The device features a low saturation voltage (1.5V @ 6A), ensuring efficient power handling with minimal losses. Packaged in an IPAK (TO-251) through-hole format, it is suitable for automated assembly while offering excellent thermal dissipation.

MJD42C1G Features

  • High Voltage & Current Handling: Supports 100V Vceo and 6A Ic, making it ideal for medium-power applications.
  • Low Saturation Voltage: 1.5V @ 6A reduces power dissipation, improving efficiency.
  • High DC Current Gain (hFE): 15 @ 3A, 4V ensures reliable amplification.
  • Robust Packaging: IPAK (TO-251) provides mechanical durability and thermal performance.
  • Compliance: ROHS3 Compliant and REACH Unaffected, meeting environmental standards.
  • Wide Operating Frequency: 3MHz transition frequency for fast switching.

MJD42C1G Applications

  • Power Management: Used in voltage regulators, DC-DC converters, and motor drivers.
  • Switching Circuits: Ideal for relay drivers, inductive load switching, and solenoid control.
  • Amplification: Suitable for audio amplifiers and signal conditioning circuits.
  • Industrial Systems: Deployed in power supplies, inverters, and automotive electronics.

Conclusion of MJD42C1G

The MJD42C1G is a versatile PNP transistor offering a balance of high voltage tolerance, current capacity, and efficiency. Its low saturation voltage and rugged IPAK package make it superior to similar models in power dissipation and reliability. While marked as obsolete, it remains a viable choice for legacy designs or applications requiring proven performance. Engineers can leverage its capabilities in power switching, amplification, and industrial control systems where durability and efficiency are critical.

Tech Specifications

Configuration
PPAP
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
SVHC
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Maximum Transition Frequency (MHz)
SVHC Exceeds Threshold
Vce Saturation (Max) @ Ib, Ic
Material
Package Length
Series
Type
Minimum DC Current Gain
Tab
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Mounting Style
Unit Weight
Transistor Polarity
RoHS
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Maximum DC Collector Current
Length
Technology
Gain Bandwidth Product fT
Collector-Emitter Saturation Voltage
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Height
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Pd - Power Dissipation
USHTS
Width

MJD42C1G Documents

Download datasheets and manufacturer documentation for MJD42C1G

Ersa Mult Devices 29/Aug/2017      
Ersa MJD41C, MJD42C      
Ersa Obsolete Notice 15/Dec/2022      
Ersa MJD41C, MJD42C      
Ersa onsemi RoHS       onsemi REACH       Material Declaration MJD42C1G      

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