onsemi_MJE180G
original

onsemi
MJE180G

276-MJE180G
PDF Datasheet
NPN BJT Power Transistor 40V 3A TO-225
7 Weeks

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Tech Specifications

Package/Case
TO-225-3
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
1.7V
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
1.7V
Current Rating
3A
Emitter Base Voltage (VEBO)
7V
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MJE180G Description

MJE180G Description

The MJE180G from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for medium-power switching and amplification applications. With a collector-emitter voltage (Vce) rating of 40V and a maximum collector current (Ic) of 3A, it offers robust performance in demanding circuits. The transistor features a transition frequency (ft) of 50MHz, making it suitable for high-speed switching and RF applications. Its low collector cutoff current (ICBO) of 100nA ensures minimal leakage, while the DC current gain (hFE) of 50 @ 100mA, 1V provides stable amplification. Packaged in a TO-126 through-hole format, the MJE180G is ideal for prototyping and industrial applications requiring reliable power handling.

MJE180G Features

  • High Current Handling: Supports up to 3A continuous collector current, making it suitable for power stages.
  • Low Saturation Voltage: 1.7V @ 600mA, 3A ensures efficient switching with minimal power loss.
  • Fast Switching: 50MHz transition frequency enables high-speed operation in RF and pulse circuits.
  • Robust Construction: TO-126 package provides excellent thermal dissipation and mechanical durability.
  • Compliance: ROHS3 and REACH compliant, meeting environmental and safety standards.
  • Wide Operating Range: Suitable for industrial, automotive, and consumer electronics due to its -65°C to +150°C junction temperature tolerance.

MJE180G Applications

The MJE180G excels in:

  • Power Amplifiers: Ideal for audio and RF amplification due to its high gain and current capability.
  • Switching Regulators: Efficiently handles DC-DC converter and motor driver circuits.
  • Relay/Driver Circuits: Low Vce(sat) minimizes heat dissipation in inductive load switching.
  • Automotive Electronics: Used in ignition systems and power management modules due to ruggedness.
  • Industrial Control Systems: Reliable performance in PLC interfaces and solenoid drivers.

Conclusion of MJE180G

The MJE180G stands out as a versatile NPN transistor for medium-power applications, combining high current capacity, fast switching, and low saturation losses. Its TO-126 package ensures durability, while compliance with ROHS3 and REACH makes it environmentally friendly. Whether in amplification, switching, or automotive systems, the MJE180G delivers consistent performance, making it a preferred choice for engineers seeking reliability and efficiency.

FAQ

What package or case is MJE180G available in?
MJE180G is available in the TO-225-3 package / case.
What is the standard lead time for MJE180G?
What operating temperature range does MJE180G support?
What is MJE180G?
What voltage specification is listed for MJE180G?
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